Samsung Galaxy Note 7 Listed on Company Site; Galaxy S8 Tipped to Sport Dual Camera Setup
Samsung is expected to release the Galaxy word 7 earlier than lifestyle, and is expected to host an Unpacked event on August 2. Now, a fresh leak guidelines that the business enterprise’s internet site is already inside the works of hosting an extra page listing the Galaxy observe 7. moreover, there may be also a separate leak revealing some interesting details of the Galaxy S8 scheduled for launch subsequent year.

beginning with the Galaxy note 7, the South Korean agency’s official internet site now hosts (through GSMArena) a person agent profile web page for the version variety SM-N930F. regrettably, the profile page would not display any details apart from the model number. presumably the SM-N930F is the Galaxy word 7, because the Galaxy be aware 5 became SM-N920, and the note 4 became the SM-N910 previously.

Samsung is stated to have skipped a numeral, and ditched the 6 to be in sync with its flagship – Galaxy S collection. The phablet has been leaked on diverse events, and it is said to include an iris scanner. this may enable customers to free up the cellphone simply by using searching at it. The Samsung Galaxy be aware 7 is rumoured to percent a 5.eight-inch QHD show; a Snapdragon 820 or Snapdragon 823 processor; 6GB of RAM; 32GB of inbuilt garage; expandable garage through microSD card, a 12-megapixel rear digicam, and a twin Pixel setup in the the front. Samsung is also expected to deliver the Galaxy note 7 with a USB kind-C port. The mass production of the phablet is stated to begin on July five.

In a separate leak (through Wccftech), Samsung’s subsequent yr flagship smartphone Galaxy S8 can also simply game the twin digicam setup that is aggressively rumoured on the iPhone 7 Plus this year. The digicam could be built by using Samsung motors (Semco) itself. it’s also predicted to feature a 4K (2160×3840 pixels) display, and can be powered by using a Snapdragon 830 SoC. The chip is pegged to be produced the usage of a 10nm FinFET procedure for more electricity and power performance.

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